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STN3N45K3 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 450 V, 3.2 Ω, 1.8 A, TO-92, SOT-223, IPAK SuperMESH3™ Power MOSFET
Features
STN3N45K3
STQ3N45K3-AP, STU3N45K3
N-channel 450 V, 3.2 Ω, 1.8 A, TO-92, SOT-223, IPAK
SuperMESH3™ Power MOSFET
Preliminary data
Type
STN3N45K3
STQ3N45K3-AP
STU3N45K3
VDSS
450 V
450 V
450 V
RDS(on)
max
ID
Pw
< 3.8 Ω
< 3.8 Ω
< 3.8 Ω
0.6 A
0.6 A
1.8 A
2W
2.5 W
27 W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Application
■ Switching applications
Description
The new SuperMESH3™ series is obtained
through the combination of a further fine tuning of
ST's well established strip-based PowerMESH™
layout with a new optimization of the vertical
structure. In addition to reducing on-resistance
significantly versus previous generation, special
attention has been taken to ensure a very good
dv/dt capability and higher margin in breakdown
voltage for the most demanding application.
TO-92
2
3
2
1
SOT-223
3
2
1
IPAK
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
STN3N45K3
STQ3N45K3-AP
STU3N45K3
Marking
3N45K3
3N45K3
3N45K3
Package
SOT-223
TO-92
IPAK
Packaging
Tube
Ammopak
Tube
April 2010
Doc ID 17206 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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