STN1N20 Datasheet, PDF (3/6 Pages) STMicroelectronics – N - CHANNEL 200V - 1.2 ohm - 1A - SOT-223 POWER MOS TRANSISTOR

STN1N20
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
t_r
( di / dt ) _{o n}
Qg
Q_gs
Qgd
P ar am et e r
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 100 V
R_G = 4.7 Ω
V_DD = 160 V
R_G = 47 Ω
VDD = 160 V
ID = 2 A
V_GS = 10 V
I_D = 4 A
V_GS = 10 V
ID = 4 A VGS = 10 V
Min.
Typ.
7
6
270
Max.
10
10
13
20
7
4
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbo l
t_{r (Voff)}
t_f
t_c
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
V_DD = 160 V I_D = 4 A
R_G = 4.7 Ω V_GS = 10 V
Min.
Typ.
6
5
13
Max.
10
10
20
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
V_SD (∗) Forward On Voltage
I_SD = 1 A V_GS = 0
t_rr
Q_rr
I _{R RM}
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I_SD = 4 A di/ dt = 100 A/µs
V_DD = 30 V T_j = 150 ^oC
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
1
4
Unit
A
A
1.5
V
170
ns
1
µC
12
A
3/6