STN1N20 Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 200V - 1.2 ohm - 1A - SOT-223 POWER MOS TRANSISTOR

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STN1N20
N - CHANNEL 200V - 1.2 Ω - 1A - SOT-223
POWER MOS TRANSISTOR
TYPE
V _DSS
R_DS(on)
I_DCONT
STN1N20
200 V < 1.5 Ω
1A
s TYPICAL RDS(on) = 1.2 Ω
s AVALANCHE RUGGED TECHNOLOGY
s SOT-223 CAN BE WAVE OR REFLOW
SOLDERED
s AVAILABLE IN TAPE AND REEL ON
REQUEST
s 150 ^oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
PRELIMINARY DATA
2
3
2
1
SOT-223
APPLICATIONS
s HARD DISK DRIVERS
s SMALL MOTOR CURRENT SENSE
CIRCUITS
s DC-DC CONVERTERS AND POWER
SUPPLIES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V_DS
V _DGR
V_GS
I_D(*)
ID(*)
Drain-source Volt age (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
I_DM(•)
P_tot
Drain Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
Derating Factor
Ts tg Storage T emperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
200
200
± 20
1
0 .6
4
2 .9
0.023
-65 to 150
(*) Limite d by package
150
September 1999
Un it
V
V
V
A
A
A
W
W /^o C
o_C
o_C
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