STL7N60M2 Datasheet, PDF (3/13 Pages) STMicroelectronics – Extremely low gate charge

STL7N60M2
Electrical ratings
1
Electrical ratings
Symbol
VGS
ID
ID
IDM⁽¹⁾
ID⁽²⁾
ID⁽²⁾
IDM⁽¹⁾⁽²⁾
PTOT
PTOT⁽²⁾
dv/dt⁽³⁾
dv/dt⁽⁴⁾
Tstg
Tj
Table 2: Absolute maximum ratings
Parameter
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Drain current (continuous) at Tpcb = 25 °C
Drain current (continuous) at Tpcb = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Total dissipation at Tpcb = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature
Max. operating junction temperature
Value
± 25
5
3.2
20
1.2
0.8
4.8
67
4
15
50
- 55 to 150
150
Unit
V
A
A
A
A
A
A
W
W
V/ns
V/ns
°C
°C
Notes:
(1)_{Pulse width limited by safe operating area.}
(2)_{When mounted on FR-4 Board of 1 inch², 2 oz Cu (t < 10 s)}
(3)_{ISD ≤ 5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V.}
(4)_{VDS ≤ 480 V}
Symbol
Rthj-case
Rthj-pcb
Table 3: Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Value
0.83
31.3
Unit
°C/W
°C/W
Symbol
IAR
EAS
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width
limited by Tjmax)
Single pulse avalanche energy (starting Tj = 25 °C,
ID = IAR; VDD = 50 V)
Value
1
80
Unit
A
mJ
DocID027417 Rev 1
3/13