STL7N60M2 Datasheet, PDF (1/13 Pages) STMicroelectronics – Extremely low gate charge

STL7N60M2
N-channel 600 V, 0.92 Ω typ., 5 A MDmesh™ M2
Power MOSFET in a PowerFLAT™ 5x5 package
Datasheet - production data
76
5
10
4
11
12 1
PowerFLAT™ 5x5
Figure 1: Internal schematic diagram
D(5, 6, 11, 12)
GSSS
10 9 8 7
D 11
6D
G(10)
D 12
5D
Features
Order code
STL7N60M2
VDS @ Tjmax
650 V
RDS(on) max
ID
1.05 Ω
5A
• Extremely low gate charge
• Excellent output capacitance (C_OSS) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
S(2, 3, 4, 7, 8, 9)
1
NC
Pin 1
identification
234
SSS
Top View
GIPG260120150916ALS
Order code
Table 1: Device summary
Marking
Package
STL7N60M2
7N60M2
PowerFLAT 5x5
Packaging
Tape and reel
January 2015
DocID027417 Rev 1
This is information on a product in full production.
1/13
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