STL4P2UH7 Datasheet, PDF (3/13 Pages) STMicroelectronics – High avalanche ruggedness

STL4P2UH7
1
Electrical ratings
Electrical ratings
Note:
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
V_DS Drain-source voltage
V_GS
I_D ⁽¹⁾
I_D ⁽¹⁾
I_DM(1)(2)
P_TOT(1)
Gate-source voltage
Drain current (continuous) at T_pcb = 25 °C
Drain current (continuous) at T_pcb = 100 °C
Drain current (pulsed)
Total dissipation at T_pcb = 25 °C
T_stg Storage temperature
T_j Max. operating junction temperature
1. The value is rated according to R_thj-pcb
2. Pulse width limited by safe operating area
20
±8
4
2.5
16
2.4
- 55 to 150
150
Unit
V
V
A
A
A
W
°C
°C
Table 3. Thermal data
Symbol
Parameter
R_thj-pcb(1)
Thermal resistance junction-pcb max, single
operation
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
Value
52
Unit
°C/W
For the P-channel Power MOSFET the actual polarity of the voltages and the current must
be reversed.
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