STL4P2UH7 Datasheet, PDF (1/13 Pages) STMicroelectronics – High avalanche ruggedness

STL4P2UH7
P-channel 20 V, 0.087 Ω typ., 4 A STripFET™ VII DeepGATE™
Power MOSFET in a PowerFLAT™ 2x2 package
Datasheet - production data
Features
1
2
3
1
2
3
6
5
4
PowerFLAT™ 2x2
Figure 1. Internal schematic diagram
1(D)
2(D)
3(G)
Order code
STL4P2UH7
V_DS
20 V
R_DS(on) max
I_D
0.1 Ω @ 4.5 V 4 A
• Ultra logic level
• Extremely low on-resistance R_DS(on)
• High avalanche ruggedness
• Low gate drive power losses
Applications
• Switching applications
Description
This device exhibits low on-state resistance and
capacitance for improved conduction and
switching performance.
D
S
6(D)
5(D)
4(S)
AM11269v1
Order code
STL4P2UH7
Table 1. Device summary
Marking
Package
4L2U
PowerFLAT™ 2x2
Packaging
Tape and reel
Note:
For the P-channel Power MOSFET the actual polarity of the voltages and the current must
be reversed.
July 2014
This is information on a product in full production.
DocID025028 Rev 3
1/13
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