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STL34NF06 Datasheet, PDF (3/6 Pages) STMicroelectronics – N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT™ LOW GATE CHARGE STripFET™II MOSFET
STL34NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 30V, ID = 17 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD = 48V, ID = 34 A,
VGS = 10V
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
td(off)
Turn-Off-Delay Time
tf
Fall Time
Test Conditions
VDD = 30V, ID = 17A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD (3) Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 34 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 34 A, di/dt = 100A/µs,
VDD = 10V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Current Limited by Wire Bonding is 20A
Min. Typ. Max. Unit
11
ns
50
ns
32
43
nC
6.5
nC
14.4
nC
Min.
Typ.
27
11
Max.
Unit
ns
ns
Min. Typ. Max. Unit
34
A
136
A
1.2
V
63
ns
151
nC
4.8
A
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