STL34NF06 Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT™ LOW GATE CHARGE STripFET™II MOSFET

STL34NF06
N-CHANNEL 60V - 0.024Ω - 34A PowerFLAT™
LOW GATE CHARGE STripFET™II MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
I_D
STL34NF06
60 V < 0.028Ω 34 A
TYPICAL R_DS(on) = 0.024Ω
IMPROVED DIE-TO-FOOTPRINT RATIO
VERY LOW PROFILE PACKAGE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique “STripFET™” technolo-
gy. The resulting transistor shows extremely low on-
resistance and minimal gate charge. The new Pow-
erFLAT™ package allow a significant reduction in
board space without compramising performance.
APPLICATIONS
DC-DC CONVERTERS
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
PowerFLAT™(5x5)
(Chip Scale Package)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C (*)
Drain Current (continuous) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
E_AS (1) Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(*) Current Limited by Wire Bonding is 20A
November 2002
Value
60
60
± 20
34
20
136
70
0.56
250
–55 to 150
(1) Starting T_j = 25°C, I_D = 17A, V_DD = 42V
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
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