STL33N60DM2 Datasheet, PDF (3/15 Pages) STMicroelectronics – N-channel 600 V, 0.115(ohm) typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package

STL33N60DM2
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
VGS
ID ⁽¹⁾
ID ⁽¹⁾
IDM ⁽¹⁾,⁽²⁾
PTOT ⁽¹⁾
IAR
EAS
dv/dt ⁽³⁾
dv/dt ⁽⁴⁾
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Avalanche current, repetitive or not-repetitive (pulse width limited by
Tj max)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Tstg Storage temperature range
Tj
Operating junction temperature range
Value
± 25
21
15
84
150
4.5
570
50
50
- 55 to 150
Unit
V
A
A
A
W
A
mJ
V/ns
V/ns
°C
Notes:
(1)_{The value is rated according to Rthj-case and limited by package.}
(2)_{Pulse width limited by safe operating area.}
(3)_{ISD ≤ 21 A, di/dt ≤ 900 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V.}
(4)_{VDS ≤ 480 V.}
Symbol
Rthj-case
Rthj-amb ⁽¹⁾
Table 3: Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Notes:
(1)_{When mounted on FR-4 board of inch², 2oz Cu.}
Value
0.83
45
Unit
°C/W
°C/W
DocID026781 Rev 2
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