STL33N60DM2 Datasheet, PDF (1/15 Pages) STMicroelectronics – N-channel 600 V, 0.115(ohm) typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package

STL33N60DM2
N-channel 600 V, 0.115 Ω typ., 21 A MDmesh™ DM2
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet - production data
5
4
32
1
PowerFLAT™ 8x8 HV
Figure 1: Internal schematic diagram
Features
Order code
STL33N60DM2
VDS @
TJmax
650 V
RDS(on)max
0.140 Ω
ID
21 A
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Order code
STL33N60DM2
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Q_rr)
and time (t_rr) combined with low R_DS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Marking
Package
Packaging
33N60DM2
PowerFLAT™ 8x8 HV
Tape and reel
March 2016
DocID026781 Rev 2
This is information on a product in full production.
1/15
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