STL190N4F7AG Datasheet, PDF (3/14 Pages) STMicroelectronics – High avalanche ruggedness

STL190N4F7AG
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VDS Drain-source voltage
40
V
VGS
ID⁽¹⁾
ID⁽¹⁾
IDM⁽¹⁾⁽²⁾
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
±20
V
120
A
120
A
480
A
PTOT Total dissipation at TC = 25 °C
127
W
IAV
Avalanche current, repetitive or not repetitive (pulse width limited by
maximum junction temperature)
35
A
EAS Single pulse avalanche energy (TJ = 25 °C, ID = 17.5 A, VDD = 22 V)
300
mJ
Tj
Operating junction temperature range
Tstg Storage temperature range
-55 to 175 °C
Notes:
(1)_{Drain current is limited by package, the current capability of the silicon is 183 A at 25 °C.}
(2)_{Pulse width limited by safe operating area}
Symbol
Rthj-pcb⁽¹⁾
Rthj-case
Table 3: Thermal data
Parameter
Thermal resistance junction-pcb
Thermal resistance junction-case
Notes:
(1)_{When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s.}
Value
31.3
1.18
Unit
°C/W
°C/W
DocID028792 Rev 2
3/14