STL190N4F7AG Datasheet, PDF (1/14 Pages) STMicroelectronics – High avalanche ruggedness

STL190N4F7AG
Automotive-grade N-channel 40 V, 1.68 mΩ typ., 120 A
STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STL190N4F7AG
VDS
40 V
RDS(on) max
2.00 mΩ
ID
120 A
 Designed for automotive applications and
AEC-Q101 qualified
 Among the lowest RDS(on) on the market
 Excellent FoM (figure of merit)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness
 Wettable flank package
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STL190N4F7AG
Table 1: Device summary
Marking
Package
190N4F7
PowerFLAT™ 5x6
Packaging
Tape and reel
June 2016
DocID028792 Rev 2
This is information on a product in full production.
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