STL13N60M2 Datasheet, PDF (3/16 Pages) STMicroelectronics – Low gate input resistance

STL13N60M2
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
V_GS
I_D
I_D
(2)
I_DM
P_TOT
(3)
dv/dt
(4)
dv/dt
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
T_stg Storage temperature
T_j
Max. operating junction temperature
1. The value is rated according to R_thj-case and limited by package
2. Pulse width limited by safe operating area.
3. I_SD ≤ 7 A, di/dt ≤ 400 A/μs; V_{DS peak} < V_(BR)DSS, V_DD=400 V.
4. V_DS ≤ 480 V
± 25
(1)
7
4.7
28
55
15
50
- 55 to 150
150
Symbol
Table 3. Thermal data
Parameter
R_thj-case Thermal resistance junction-case max
(1)
R_thj-pcb Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4, 2 Oz copper board
Value
2.27
59
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Avalanche current, repetitive or not
I_AR
repetitive (pulse width limited by T_jmax)
2.8
Single pulse avalanche energy (starting
E_AS
T_j=25°C, I_D= I_AR; V_DD=50)
125
Unit
V
A
A
A
W
V/ns
V/ns
°C
Unit
°C/W
°C/W
Unit
A
mJ
DocID026363 Rev 2
3/16
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