STL13N60M2 Datasheet, PDF (1/16 Pages) STMicroelectronics – Low gate input resistance

STL13N60M2
N-channel 600 V, 0.39 Ω typ., 7 A MDmesh II Plus™ low Q_g
Power MOSFET in a PowerFLAT™ 5x6 HV package
Datasheet − production data
1
2
3
4
PowerFLAT™ 5x6 HV
Features
Order code V_DS @ T_Jmax R_DS(on) max I_D
STL13N60M2 650 V
0.42 Ω
7A
• Extremely low gate charge
• Lower R_DS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
S(1, 2, 3)
12 34
Top View
AM15540v2
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q_g. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Order code
STL13N60M2
Table 1. Device summary
Marking
Package
13N60M2
PowerFLAT™ 5x6 HV
Packaging
Tape and reel
June 2014
This is information on a product in full production.
DocID026363 Rev 2
1/16
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