STFU15N80K5 Datasheet, PDF (3/13 Pages) STMicroelectronics – Ultra low gate charge

STFU15N80K5
Electrical ratings
1
Electrical ratings
Symbol
VGS
ID
ID
IDM⁽²⁾
PTOT
IAR
EAS
VISO
dv/dt ⁽³⁾
Tstg
Tj
Table 2: Absolute maximum ratings
Parameter
Gate source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Max current during repetitive or single pulse avalanche
(pulse width limited by Tjmax )
Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS,
VDD = 50 V)
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s; TC = 25 °C)
Peak diode recovery voltage slope
Storage temperature
Operating junction temperature
Value
±30
14⁽¹⁾
8.8⁽¹⁾
56⁽¹⁾
35
4
150
2500
4.5
-55 to
150
Unit
V
A
A
A
W
A
mJ
V
V/ns
°C
Notes:
(1)_{Limited by package.}
(2)_{Pulse width limited by safe operating area.}
(3)_{ISD ≤ 14 A, di/dt ≤ 100 A/μs, VPeak ≤ V(BR)DSS.}
Symbol
Rthj-case
Rthj-amb
Table 3: Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Value
4.17
62.5
Unit
°C/W
DocID027658 Rev 2
3/13