STFU15N80K5 Datasheet, PDF (1/13 Pages) STMicroelectronics – Ultra low gate charge

STFU15N80K5
N-channel 800 V, 0.3 Ω typ., 14 A MDmesh™ K5
Power MOSFET in a TO-220FP ultra narrow leads package
Datasheet - production data
3
2
1
TO-220FP
ultra narrow leads
Figure 1: Internal schematic diagram
Features
Order code
STFU15N80K5
VDS
800 V
RDS(on) max
0.375 Ω
ID
14 A
 Industry’s lowest RDS(on) x area
 Industry’s best figure of merit (FoM)
 Ultra low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STFU15N80K5
Table 1: Device summary
Marking
Package
15N80K5
TO-220FP ultra narrow leads
Packing
Tube
September 2015
DocID027658 Rev 2
This is information on a product in full production.
1/13
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