STF7N60M2 Datasheet, PDF (3/13 Pages) STMicroelectronics – Low gate input resistance

STF7N60M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
V_ISO
dv/dt ⁽²⁾
dv/dt⁽³⁾
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Insulation withstand voltage (RMS) from all three leads to
external heat sink
(t=1 s; T_C=25 °C)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. I_SD ≤ 5 A, di/dt ≤ 400 A/µs; V_{DS peak} < V_(BR)DSS, V_DD=400 V
3. V_DS ≤ 480 V
Table 3. Thermal data
Symbol
Parameter
R_thj-case
R_thj-amb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Table 4. Avalanche characteristics
Symbol
Parameter
I_AR
Avalanche current, repetitive or not repetitive (pulse width
limited by T_jmax )
E_AS
Single pulse avalanche energy (starting T_j=25°C, I_D= I_AR;
V_DD=50)
Value
± 25
5⁽¹⁾
3.5⁽¹⁾
20⁽¹⁾
20
2500
15
50
- 55 to 150
Unit
V
A
A
A
W
V
V/ns
°C
Value
6.25
62.5
Unit
°C/W
°C/W
Value
Unit
1.5
A
99
mJ
DocID024894 Rev 1
3/13
13