STF7N60M2 Datasheet, PDF (1/13 Pages) STMicroelectronics – Low gate input resistance

STF7N60M2
N-channel 600 V, 0.86 Ω typ., 5 A MDmesh II Plus™ low Q_g
Power MOSFET in TO-220FP package
Datasheet - production data
Features
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
, TAB
Order code
STF7N60M2
V_DS @
T_Jmax
R_DS(on)
max
I_D
650 V 0.95 Ω 5 A
• Extremely low gate charge
• Lower R_DS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q_g. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
AM15572v1
Order code
STF7N60M2
Table 1. Device summary
Marking
Package
7N60M2
TO-220FP
Packaging
Tube
June 2013
This is information on a product in full production.
DocID024894 Rev 1
1/13
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