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STE70NM60 Datasheet, PDF (3/8 Pages) STMicroelectronics – N-CHANNEL 600V - 0.050W - 70A ISOTOP Zener-Protected MDmesh Power MOSFET
STE70NM60
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
600
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125°C
10
µA
100
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 30 A
0.050 0.055
Ω
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
RG
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance
Test Conditions
VDS = ID(on) x RDS(on)max,
ID = 30 A
VDS = 25 V, f = 1 MHz, VGS = 0
Min.
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
Typ.
35
7300
2000
40
1.8
Max. Unit
S
pF
pF
pF
Ω
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 300 V, ID = 30 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
VDD = 470 V, ID = 60 A,
VGS = 10 V
Min.
Typ.
55
95
Max.
Unit
ns
ns
178
266
nC
44.5
nC
95
nC
SWITCHING OFF
Symbol
Parameter
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 400 V, ID = 60 A,
RG = 4.7Ω, VGS = 10 V
(see test circuit, Figure 5)
Min.
Typ.
130
76
105
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 60 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 60 A, di/dt = 100 A/µs,
VDD = 30 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
600
14
48
Max.
60
240
1.5
Unit
A
A
V
ns
µC
A
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