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| STE70NM60 Datasheet, PDF (2/8 Pages) STMicroelectronics – N-CHANNEL 600V - 0.050W - 70A ISOTOP Zener-Protected MDmesh Power MOSFET | |||
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STE70NM60
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15Kâ¦)
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢)Pulse width limited by safe operating area
(1) ISD â¤70A, di/dt â¤400 A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX.
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Rthj-amb Thermal Resistance Junction-ambient
Max
Tl
Maximum Lead Temperature For Soldering Purpose
Value
600
600
±30
70
44
280
600
6
4.5
15
â65 to 150
150
Unit
V
V
V
A
A
A
W
KV
W/°C
V/ns
°C
°C
0.2
°C/W
30
°C/W
300
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
Max Value
Unit
30
A
1.4
J
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max. Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the deviceâs
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the deviceâs integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/8
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