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| STE70NM50 Datasheet, PDF (3/8 Pages) STMicroelectronics – N-CHANNEL 500V - 0.045ohm - 70A ISOTOP Zener-Protected MDmesh™Power MOSFET | |||
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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 250V, ID = 30A
RG = 4.7⦠VGS = 10V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD = 400V, ID = 60A,
VGS = 10V
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 400V, ID = 60A,
RG = 4.7â¦, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 60A, VGS = 0
trr
Reverse Recovery Time
ISD = 60A, di/dt = 100A/µs,
Qrr
Reverse Recovery Charge
VDD = 100 V, Tj = 25°C
Irrm
Reverse Recovery Current (see test circuit, Figure 5)
trr
Reverse Recovery Time
ISD = 60A, di/dt = 100A/µs,
Qrr
Reverse Recovery Charge
VDD = 100 V, Tj = 150°C
Irrm
Reverse Recovery Current (see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
STE70NM50
Min. Typ. Max. Unit
51
ns
58
ns
190
266
nC
53
nC
97
nC
Min. Typ. Max. Unit
51
ns
46
ns
108
ns
Min. Typ. Max. Unit
60
A
240
A
1.5
V
532
ns
9.9
µC
37
A
636
ns
13.4
µC
42
A
Min. Typ. Max. Unit
30
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the deviceâs
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the 25V Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the deviceâs integrity. These integrated Zener diodes thus avoid
the usage of external components.
3/8
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