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| STE70NM50 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 500V - 0.045ohm - 70A ISOTOP Zener-Protected MDmesh™Power MOSFET | |||
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STE70NM50
N-CHANNEL 500V - 0.045⦠- 70A ISOTOP
Zener-Protected MDmeshâ¢Power MOSFET
TYPE
VDSS
RDS(on)
ID
STE70NM50
500V
< 0.05â¦
70 A
n TYPICAL RDS(on) = 0.045â¦
n HIGH dv/dt AND AVALANCHE CAPABILITIES
n IMPROVED ESD CAPABILITY
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE
n TIGHT PROCESS CONTROL
n INDUSTRYâS LOWEST ON-RESISTANCE
DESCRIPTION
The MDmesh⢠is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Companyâs PowerMESH⢠horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Companyâs proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competitionâs products.
APPLICATIONS
The MDmesh⢠family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15Kâ¦)
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢)Pulse width limited by safe operating area
September 2002
Value
Unit
500
V
500
V
±30
V
70
A
44
A
280
A
600
W
6
KV
5
W/°C
15
V/ns
â65 to 150
°C
150
°C
(1)ISD â¤60A, di/dt â¤400A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX
1/8
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