STE40NC60 Datasheet, PDF (3/8 Pages) STMicroelectronics – N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh™II MOSFET

STE40NC60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
t_d(on)
t_r
Turn-on Delay Time
Rise Time
V_DD = 300 V, I_D = 20 A
R_G = 4.7Ω V_GS = 10V
(see test circuit, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
V_DD = 480V, I_D = 40A,
V_GS = 10V
Q_gd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
t_r(Voff)
Off-voltage Rise Time
t_f
Fall Time
t_c
Cross-over Time
Test Conditions
V_DD = 480V, I_D = 40A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (2) Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 40A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 40 A, di/dt = 100 A/µs,
V_DD = 40 V, T_j = 150 °C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min. Typ. Max. Unit
49
ns
42
ns
307.5 430
nC
48
nC
146.5
nC
Min. Typ. Max. Unit
41
ns
26
ns
74
ns
Min. Typ. Max. Unit
40
A
160
A
1.6
V
685
ns
15
µC
44
A
Safe Operating Area
Thermal Impedence
3/8