STE40NC60 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh™II MOSFET

STE40NC60
N-CHANNEL 600V - 0.098Ω - 40A ISOTOP
PowerMesh™II MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STE40NC60
600V
< 0.13Ω
40 A
n TYPICAL R_DS(on) = 0.098 Ω
n EXTREMELY HIGH dv/dt CAPABILITY
n 100% AVALANCHE TESTED
n NEW HIGH VOLTAGE BENCHMARK
n GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
n HIGH CURRENT, HIGH SPEED SWITCHING
n SWITH MODE POWER SUPPLIES (SMPS)
n DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (l) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
V_ISO
Insulation Winthstand Voltage (AC-RMS)
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2002
Value
600
600
±30
40
23
160
460
3.68
3
2500
–65 to 150
150
(1) I_SD≤ 40A, di/dt≤100 A/µs, V_DD≤ 24V, Tj≤T_jMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
1/8