STE38NB50F Datasheet, PDF (3/8 Pages) STMicroelectronics – N - CHANNEL 500V - 0.11 ohm - 38A - ISOTOP PowerMESH MOSFET

STE38NB50F
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
t_r
P ar am et e r
Turn-on Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gat e-Drain Charge
Test Conditions
VDD = 250 V
ID = 19 A
R_G = 4.7 Ω
V_GS = 10 V
(see test circuit, figure 3)
V_DD = 400 V I_D = 38 A V_GS = 10 V
Min.
Typ.
45
35
140
38
61
Max.
196
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t_{r (Voff)}
tf
t_c
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
V_DD = 400 V
I_D = 38 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
28
30
60
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
I_SD
I_SDM (•)
V_SD (∗)
t_rr
Q_rr
I _{R RM}
P ar am et e r
Source-drain Current
Source-drain Current
( pu ls ed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
I_SD = 38 A V_GS = 0
I_SD = 38 A
V_DD = 100 V
di/dt = 100 A/µs
T_j = 150 ^oC
(see test circuit, figure 5)
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
38
152
Unit
A
A
1.6
V
715
ns
11.8
µC
33
A
Safe Operating Area
Thermal Impedance
3/8