STE38NB50F Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 500V - 0.11 ohm - 38A - ISOTOP PowerMESH MOSFET

®
STE38NB50F
N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP
PowerMESH™ MOSFET
TYPE
V _DSS
R_DS(on)
I_D
STE38NB50F
500 V < 0.14 Ω 38 A
s TYPICAL RDS(on) = 0.11 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V_DS
V _DGR
V_GS
I_D
ID
Drain-source Volt age (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
I_DM(•)
P_tot
Drain Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_{s tg} Storage T emperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
December 1999
Value
Un it
500
V
500
V
± 30
V
38
A
24
A
152
A
400
W
3 .2
W /^o C
4 .5
-65 to 150
150
( 1) ISD ≤38 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
1/8