STE26N50 Datasheet, PDF (3/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symb ol
t_{r(Vof f)}
t_f
t_c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 400 V I_D = 26 A
R_G = 4.7 Ω
V_GS = 10 V
(see test circuit, figure 3)
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Conditions
I_{S D}
I SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
V_SD (∗) Forward On Voltage
I_SD = 26 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr Reverse Recovery
I_SD = 26 A
di/dt = 100 A/µs
V_DD = 100 V T_j = 150 ^oC
(see test circuit, figure 3)
Charge
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STE26N50
Min.
Typ.
63
25
85
Max.
Unit
ns
ns
ns
Min.
Typ.
Max.
26
104
Unit
A
A
1.4
V
850
ns
23.5
µC
55
A
Safe Operating Area
Thermal Impedance
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