STE26N50 Datasheet, PDF (2/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

STE26N50
THERMAL DATA
R_thj-case Thermal Resistance Junction-case
R_thc-h Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
0.42
0.05
o_{C/ W}
o_{C/ W}
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 1 mA VGS = 0 V
I_DSS
Zero Gate Voltage
V_DS = Max Rating
Drain Current (V_GS = 0) V_DS = Max Rating x 0.8 T_c = 125 ^oC
I_{G SS}
Gate-body Leakage
Current (V_{D S} = 0)
V_GS = ± 20 V
Min.
500
Typ.
Max.
Unit
V
200
µA
1
mA
± 200 nA
ON (∗)
Symb ol
VG S(th)
RDS(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 1 mA
Static Drain-source On VGS = 10V ID = 13 A
R esist anc e
Min.
2
Typ.
Max.
4
0.2
Unit
V
Ω
DYNAMIC
Symb ol
g_fs (∗)
Ciss
Coss
C_rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS = 15 V I_D = 13 A
Min.
12
Typ.
Max.
Unit
S
VDS = 25 V f = 1 MHz VG S = 0 V
6
nF
1200 pF
500
pF
SWITCHING ON
Symb ol
td(on)
t_r
(di/ d t) _{o n}
Q_g
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Test Conditions
VDD = 250 V ID = 13 A
R_G = 4.7 Ω
V_GS = 10 V
(see test circuit, figure 1)
V_DD = 400 V I_D = 26 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
V_DD = 400 V
V_GS = 10 V
I_D = 26 A
Min.
Typ.
60
80
Max.
Unit
ns
ns
450
A/µs
275
nC
2/8