STE15NA100 Datasheet, PDF (3/5 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STE15NA100
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 500 V
RG = 4.7 Ω
VDD = 800 V
ID = 7.5 A
VGS = 10 V
ID = 15 A VGS = 10 V
Min.
Typ.
40
55
470
43
226
Max.
56
77
660
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 800 V
RG = 4.7 Ω
ID = 15 A
VGS = 10 V
Min.
Typ.
110
25
150
Max.
154
36
210
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage ISD = 15 A
VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 15 A
VR = 100 V
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 ^oC
Min.
Typ.
Max.
15
60
Unit
A
A
1.6
V
1400
ns
42
µC
60
A
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