STE15NA100 Datasheet, PDF (2/5 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STE15NA100
THERMAL DATA
Rthj-case
Rthc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
0.27
0.05
o_C/W
o_C/W
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 ^oC, ID = IAR, VDD = 50 V)
Max Value
TBD
TBD
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 500 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS =0.8x Max Rating Tc = 125 ^oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
1000
Typ.
Max.
250
1000
± 200
Unit
V
µA
µA
nA
ON (∗)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 1mA
Static Drain-source On VGS = 10V ID = 7.5 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2.25
Typ.
3
Max.
3.75
Unit
V
0.65 0.77
Ω
15
A
DYNAMIC
Symbol
gfs (∗)
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 7.5 A
VDS = 25 V f = 1.0 MHz VGS = 0
Min.
12
Typ.
Max.
Unit
S
7
9.1
nF
600 780 pF
150 195 pF
2/5