STD9N10L Datasheet, PDF (3/6 Pages) STMicroelectronics – N - CHANNEL 100V - 0.22ohm - 9A IPAK/DPAK POWER MOS TRANSISTOR

STD9N10L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
t_r
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 50 V
R_G = 4.7 Ω
ID = 4.5 A
V_GS = 5 V
Min.
Typ.
10
25
Max.
14
35
Unit
ns
ns
Q_g
Total Gate Charge
V_DD = 80 V I_D = 9 A V_GS = 10 V
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
13
18
nC
5.5
nC
6
nC
SWITCHING OFF
Symbol
t_r(Voff)
tf
t_c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 80 V
RG = 4.7 Ω
I_D = 9 A
VGS = 5 V
Min.
Typ.
10
10
25
Max.
14
14
35
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
I_SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
V_SD (∗) Forward On Voltage
I_SD = 9 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
I_SD = 9 A
V_DD = 25 V
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
T_j = 150 ^oC
Min.
Typ.
Max.
9
36
Unit
A
A
1.5
V
110
ns
0.4
µC
7.2
A
3/6
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