STD9N10L Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 100V - 0.22ohm - 9A IPAK/DPAK POWER MOS TRANSISTOR

STD9N10L
N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK
POWER MOS TRANSISTOR
TYPE
V_DSS
R_DS(on)
I_D
STD9N10L
100 V < 0.27 Ω
9A
s TYPICAL RDS(on) = 0.22 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s HIGH CURRENT CAPABILITY
s 175^oC OPERATING TEMPERATURE
s HIGH dV/dt RUGGEDNESS
s APPLICATION ORIENTED
CHARACTERIZATION
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s POWER MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCRONOUS RECTIFICATION
3
2
3
1
1
IPAK
TO-251
(Suffix "-1")
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
V_GS
I_D
I_D
IDM(•)
P_tot
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
dV/dt(1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
April 2000
Value
100
100
± 20
9
6.4
36
45
0.3
7
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/^oC
V/ns
o_C
o_C
1/6