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| STD845DN40 Datasheet, PDF (3/10 Pages) STMicroelectronics – Dual NPN high voltage transistors in a single package | |||
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STD845DN40
2
Electrical characteristics
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
ICES
Collector cut-off
current (VBE = 0)
ICEO
Collector cut-off
current (IB = 0)
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
Collector-emitter
VCEO(sus)(1) sustaining voltage
(IB = 0)
VCE(sat)(1)
Collector-emitter
saturation voltage
VBE(sat)(1)
Base-emitter
saturation voltage
hFE(1)
VF
DC current gain
Diode forward voltage
VCE = 700 V
VCE = 700 V
VCE = 400 V
IE = 10 mA
IC = 100 mA
IC = 0.5 A
IC = 1 A
IC = 2.5 A
IC = 4 A
IC = 0.5 A
IC = 1 A
IC = 2.5 A
IC = 10 mA
IC = 2 A
IF = 2 A
Tc = 125 °C
IB = 0.1 A
IB = 0.2 A
IB = 0.5 A
IB = 1 A
IB = 0.1 A
IB = 0.2 A
IB = 0.5 A
VCE = 5 V
VCE = 5 V
Min.
9
400
10
12
Resistive load
ts
Storage time
tf
Fall time
IC = 2 A
IB(on) = - IB(off) = 400 mA
VCC = 125 V
tp = 30 µs
Inductive load
ts
Storage time
tf
Fall time
IC = 2 A, VCC = 200 V
VBE(off) = - 5 V IB(on) = 400 mA
RBB = 0, L = 200 µH
1. Pulse test: pulse duration â¤300 µs, duty cycle ⤠2 %.
Typ.
0.5
2.5
0.2
0.6
0.1
Max. Unit
100 µA
500 µA
250 µA
18 V
V
0.7 V
1
V
1.5 V
V
1.1 V
1.2 V
1.3 V
32
2.5 V
µs
µs
µs
µs
Doc ID 17211 Rev 3
3/10
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