STD845DN40 Datasheet, PDF (2/10 Pages) STMicroelectronics – Dual NPN high voltage transistors in a single package

Electrical ratings
1
Electrical ratings
STD845DN40
Table 2.
Symbol
Absolute maximum ratings
Parameter
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
P_TOT
T_STG
T_J
Collector-base voltage (I_E = 0)
Collector-emitter voltage (I_B = 0)
Emitter-base voltage (I_C = 0, I_B = 2 A, t_p < 10 ms)
Collector current
Collector peak current (t_P < 5 ms)
Base current
Base peak current (t_P < 5 ms)
Total dissipation at T_amb = 25 °C single transistor
Total dissipation at T_case = 25 °C single transistor
Storage temperature
Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
R_thJA(1) Thermal resistance junction-ambient (single transistor)
R_thJC Thermal resistance junction-case (single transistor)
1. Device mounted on PCB area of 25 mm².
Value
700
400
V_(BR)EBO
4
8
2
4
3
45
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
W
°C
°C
Value
42
2.7
Unit
°C/W
°C/W
2/10
Doc ID 17211 Rev 3