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| STD815CP40 Datasheet, PDF (3/11 Pages) STMicroelectronics – Complementary transistor pair in a single package | |||
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STD815CP40
2
Electrical characteristics
Electrical characteristics
Note:
Tcase = 25°C unless otherwise specified.
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off current
(VBE = 0)
For NPN:
VCE = 700 V
VCE = 700 V
For PNP:
VCE = 500 V
VCE = 500 V
TC = 125°C
TC = 125°C
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = 10 mA
For NPN:
For PNP:
12
5
1 mA
5 mA
1 mA
5 mA
18
V
10
V
Collector-emitter
VCEO(sus)(1) sustaining voltage
(IB = 0)
VCE(sat)(1)
Collector-emitter
saturation voltage
VBE(sat)(1)
Base-emitter saturation
voltage
IC = 5 mA
IC = 0.5 A
IC = 0.35 A
IC = 0.5 A_
400
IB = 0.1 A
IB = 50 mA
_ IB = 0.1 A
V
0.5 V
1
V
1
V
IC = 10 mA
VCE = 5 V 10
hFE(1) DC current gain
IC = 0.35A
VCE = 5 V 16
34
IC = 1 A
VCE = 5 V 4
Resistive load
tr
Rise time
ts
Storage time
tf
Fall time
IC = 0.35 A VCC = 125 V
100
ns
IB1 = 70 mA_ IB2 = -70 mA
2.2
µs
tp ⥠25 µs
0.2
µs
Inductive load
ts
Storage time
tf
Fall time
IC = 0.5 A _ _ IB1 = 0.1 A
VBE(off) = -5 V
450
ns
Vclamp = 300 V L = 10 mH
80
ns
1. Pulse test: pulse duration ⤠300 µs, duty cycle â¤2 %.
For PNP types voltage and current values are negative
Doc ID 14829 Rev 4
3/11
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