STD815CP40 Datasheet, PDF (2/11 Pages) STMicroelectronics – Complementary transistor pair in a single package

Electrical ratings
1
Electrical ratings
STD815CP40
Table 2. Absolute maximum ratings
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
P_TOT
P_TOT
T_STG
T_J
Collector-base voltage (I_E = 0)
Collector-emitter voltage (I_B = 0)
Emitter-base voltage (I_C = 0, I_B = 0.75 A, t_p < 10 ms)
Collector current
Collector peak current (t_P < 5 ms)
Base current
Base peak current (t_P < 1 ms)
Total dissipation at T_amb = 25 °C single transistor
Total dissipation at T_case = 25 °C single transistor
Storage temperature
Max. operating junction temperature
Value
NPN
PNP
700
500
400
V_(BR)EBO
1.5
3
0.75
1.5
2.6
45
- 65 to 150
150
Unit
V
V
V
A
A
A
A
W
W
°C
°C
Note:
Table 3. Thermal data
Symbol
Parameter
R_thJA ⁽¹⁾ Thermal resistance junction-ambient (single transistor)
R_thJC ⁽¹⁾ Thermal resistance junction-case (single transistor)
1. When mounted on 25mm square pad of 2 oz. copper, t ≤10 sec.
For PNP types voltage and current values are negative.
Value
48
2.7
Unit
°C/W
°C/W
2/11
Doc ID 14829 Rev 4