STD7NS20 Datasheet, PDF (3/8 Pages) STMicroelectronics – N-CHANNEL 200V - 0.35ohm - 7A DPAK / IPAK MESH OVERLAY™ MOSFET

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
t_d(on)
Turn-on Delay Time
t_r
Rise Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
Test Conditions
V_DD = 100 V, I_D = 3.5 A
R_G = 4.7Ω V_GS = 10 V
(see test circuit, Figure 3)
V_DD = 160V, I_D = 18 A,
V_GS = 10V
SWITCHING OFF
Symbol
Parameter
t_r(Voff)
t_f
t_c
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_clamp = 160 V, I_D = 7 A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (2) Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 7 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 7 A, di/dt = 100A/µs
V_DD = 50V, T_j = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STD7NS20 / STD7NS20-1
Min.
Typ.
10
15
31
7.5
9
Max.
45
Unit
ns
ns
nC
nC
nC
Min.
Typ.
12
12
25
Max.
Unit
ns
ns
ns
Min.
Typ.
170
0.95
11
Max.
7
28
1.5
Unit
A
A
V
ns
µC
A
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