STD6NF10_08 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET™ Power MOSFET

STD6NF10, STU6NF10
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage (V_GS = 0)
V_GS
Gate- source voltage
I_D
Drain current (continuous) at T_C = 25 °C
I_D
I_DM(1)
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
P_tot
Total dissipation at T_C = 25 °C
Derating factor
dv/dt ⁽²⁾ Peak diode recovery voltage slope
E_AS ⁽³⁾
Single pulse avalanche energy
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. I_SD ≤ 6 A, di/dt ≤ 300 A/µs, V_DD ≤ V_(BR)DSS, Tj ≤ T_JMAX
3. Starting T_j = 25 °C, I_D = 3 A, V_DD = 50 V
Table 3. Thermal data
Symbol
Parameter
R_thj-case
R_thj-amb
T_J
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Electrical ratings
Value
100
± 20
6
4
24
30
0.2
40
200
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
-65 to 175 °C
Value
5
100
300
Unit
°C/W
°C/W
°C
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