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STD6NF10_08 Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET™ Power MOSFET
STD6NF10
STU6NF10
N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK
low gate charge STripFET™ Power MOSFET
Features
Type
STD6NF10
STU6NF10
VDSS
RDS(on) max
ID
100 V < 0.250 Ω 6 A
100 V < 0.250 Ω 6 A
■ Exceptional dv/dt capability
■ 100% avalanche tested
Application
■ Switching applications
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for telecom and computer applications.
It is also intended for any applications with low
gate drive requirements.
3
2
1
IPAK
3
1
DPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD6NF10T4
STU6NF10
Marking
D6NF10
6NF10
Package
DPAK
IPAK
Packaging
Tape and reel
Tube
November 2008
Rev 6
1/14
www.st.com
14