STD64N4F6AG Datasheet, PDF (3/15 Pages) STMicroelectronics – Very low on-resistance

STD64N4F6AG
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VDS
VGS
ID
IDM⁽²⁾
PTOT
Tstg
Tj
Drain-source voltage
Gate-source voltage
Drain current (continuous) at Tcase = 25 °C⁽¹⁾
Drain current (continuous) at Tcase = 100 °C
Drain current (pulsed)
Total dissipation at Tcase = 25 °C
Storage temperature
Operating junction temperature
Notes:
(1) _{Current is limited by package.}
(2) _{Pulse width is limited by safe operating area.}
Symbol
Rthj-case
Rthj-pcb⁽¹⁾
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb
Notes:
(1) _{When mounted on a 1-inch² FR-4, 2 Oz copper board.}
Symbol
IAS⁽¹⁾
EAS⁽²⁾
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
Notes:
(1) _{Pulse width limited by Tjmax.}
(2) _{starting Tj = 25 °C, ID = IAS, VDD = 25 V.}
Electrical ratings
Value
Unit
40
V
±20
V
54
A
46
216
A
60
W
-55 to 175
°C
Value
2.5
35
Unit
°C/W
Value
Unit
54
A
180
mJ
DocID027883 Rev 1
3/15