STD64N4F6AG Datasheet, PDF (1/15 Pages) STMicroelectronics – Very low on-resistance

STD64N4F6AG
Automotive-grade N-channel 40 V, 7 mΩ typ., 54 A STripFET™ F6
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STD64N4F6AG
VDS
40 V
RDS(on) max.
8.2 mΩ
ID
54 A
PTOT
60 W
• Designed for automotive applications and
AEC-Q101 qualified
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
Order code
STD64N4F6AG
Table 1: Device summary
Marking
Package
64N4F6
DPAK
Packing
Tape and reel
June 2015
DocID027883 Rev 1
This is information on a product in full production.
1/15
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