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STD60NF06 Datasheet, PDF (3/9 Pages) STMicroelectronics – N-CHANNEL 60V - 0.014ohm - 60A DPAK STripFET™ II POWER MOSFET
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 30 V, ID = 30 A
RG = 4.7Ω , VGS = 10 V
(see test circuit, Figure 3)
Qg
Total Gate Charge
VDD = 48 V, ID =60 A
VGS = 10 V
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off-Delay Time
Fall Time
td(off)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 30 V, ID = 30 A,
RG = 4.7Ω, VGS = 10 V
(see test circuit, Figure 3)
Vclamp =48 V, ID = 60 A
RG = 4.7Ω, VGS = 10 V
(see test circuit, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 60 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 60 A, di/dt = 100A/µs,
VDD = 25V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STD60NF06
Min. Typ. Max. Unit
16
ns
108
ns
49
66
nC
18
nC
14
nC
Min.
Typ.
43
20
Max.
Unit
ns
ns
40
ns
12
ns
21
ns
Min. Typ. Max. Unit
60
A
240
A
1.3
V
73
ns
182
nC
5
A
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