 English |
|
|
|
|
|
|
|
| STD60NF06 Datasheet, PDF (2/9 Pages) STMicroelectronics – N-CHANNEL 60V - 0.014ohm - 60A DPAK STripFET™ II POWER MOSFET | |||
| |||
| ◁ |
STD60NF06
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.36
Rthj-amb Thermal Resistance Junction-ambient
Max
100
Tl
Maximum Lead Temperature For Soldering Purpose
275
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 30 V)
Max Value
30
350
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
60
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
1
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 30 A
Min. Typ. Max. Unit
2
4
V
0.014 0.016
â¦
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS =15 V , ID = 30 A
VDS = 25 V, f = 1 MHz, VGS = 0
Min.
Typ.
20
1810
360
125
Max. Unit
S
pF
pF
pF
2/9
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese