STD5N20 Datasheet, PDF (3/10 Pages) STMicroelectronics – N - CHANNEL 200V - 0.7ohm - 5A - TO-251/TO-252 POWER MOS TRANSISTOR

STD5N20
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
t_r
( di / dt ) _{o n}
Q_g
Q_gs
Q_gd
P ar am et e r
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 100 V ID = 2.5 A
R_G = 4.7 Ω
V_GS = 10 V
(see test circuit, figure 3)
V_DD = 160 V
I_D = 5 A
R_G = 47 Ω
V_GS = 10 V
(see test circuit, figure 5)
V_DD = 160 V I_D = 5 A V_GS = 10 V
Min.
Typ.
7
6
400
18
6
7
Max.
10
8
25
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbo l
t_{r (Voff)}
t_f
t_c
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
V_DD = 160 V I_D = 5 A
R_G = 4.7 Ω V_GS = 10 V
(see test circuit, figure 5)
Min.
Typ.
7
5
15
Max.
10
7
20
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
V_SD (∗) Forward On Voltage
I_SD = 5 A V_GS = 0
t_rr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
I_SD = 5 A
di/dt = 100 A/µs
V_DD = 100 V T_j = 150 ^oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
5
20
Unit
A
A
1.5
V
180
ns
1125
nC
12.5
A
Safe Operating Area
Thermal Impedance
3/10