STD5N20 Datasheet, PDF (1/10 Pages) STMicroelectronics – N - CHANNEL 200V - 0.7ohm - 5A - TO-251/TO-252 POWER MOS TRANSISTOR

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STD5N20
N - CHANNEL 200V - 0.7Ω - 5A - TO-251/TO-252
POWER MOS TRANSISTOR
TYPE
V _DSS
R_DS(on)
I_D
STD5N20
200 V < 0.8 Ω
5A
s TYPICAL RDS(on) = 0.7 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 150^oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC CONVERTERS & DC-AC INVERTERS
s TELECOMMUNICATION POWER SUPPLIES
INDUSTRIAL MOTOR DRIVES
3
2
1
IPAK
TO-251
(Suffix ”-1”)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V_DS
V _DGR
V_GS
I_D
ID
Drain-source Volt age (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
I_DM(•)
P_tot
Drain Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
Derating Factor
Ts tg Storage T emperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1999
Value
200
200
± 20
5
3 .5
20
45
0. 36
-65 to 150
150
Un it
V
V
V
A
A
A
W
W /^o C
o_C
o_C
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