STD4NS25 Datasheet, PDF (3/9 Pages) STMicroelectronics – N-CHANNEL 250V - 0.9ohm - 4A DPAK/IPAK MESH OVERLAY™ MOSFET

STD4NS25
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
t_d(on)
Turn-on Delay Time
t_r
Rise Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
Test Conditions
V_DD = 125 V, I_D = 2 A
R_G = 4.7Ω V_GS = 10 V
(see test circuit, Figure 3)
V_DD = 200V, I_D = 4 A,
V_GS = 10V
SWITCHING OFF
Symbol
Parameter
t_d(Voff)
t_f
Turn-off- Delay Time
Fall Time
t_r(Voff)
t_f
t_c
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 125V, I_D = 2 A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 3)
V_clamp = 200V, I_D = 4 A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 5)
Min. Typ. Max. Unit
12
ns
18
ns
19
27
nC
3.2
nC
7.5
nC
Min.
Typ.
70
10.5
Max.
Unit
ns
ns
13
ns
10
ns
21.5
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (2) Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 4 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 4 A, di/dt = 100A/µs
V_DD = 30V, T_j = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min. Typ.
124
0.5
7.2
Safe Operating Area
Thermal Impedance
Max.
4
16
1.5
Unit
A
A
V
ns
µC
A
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