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STD4NS25 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 250V - 0.9ohm - 4A DPAK/IPAK MESH OVERLAY™ MOSFET | |||
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STD4NS25
N-CHANNEL 250V - 0.9⦠- 4A DPAK/IPAK
MESH OVERLAY⢠MOSFET
TYPE
VDSS
RDS(on)
ID
STD4NS25
250 V < 1.1 â¦
4A
s TYPICAL RDS(on) = 0.9 â¦
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s ADD SUFFIX âT4â FOR ORDERING IN TAPE &
REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAYâ¢
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Companyâs proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
3
1
DPAK
TO-252
3
2
1
IPAK
TO-251
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢)Pulse width limited by safe operating area
February 2001
Value
250
250
± 20
4
2.5
16
50
0.4
5
â65 to 150
150
(1) ISD⤠4A, di/dtâ¤300 A/µs, VDD⤠V(BR)DSS, Tjâ¤TjMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
1/9
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