STD4NC50 Datasheet, PDF (3/8 Pages) STMicroelectronics – N - CHANNEL 500V - 1.3 ohm - 3.7 A TO-251 PowerMESH MOSFET

STD4NC50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
t_d(on)
t_r
P ar am et e r
Turn-on Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gat e-Drain Charge
Test Conditions
V_DD = 250 V I_D = 1.9 A
R_G = 4.7 Ω
V_GS = 10 V
(see test circuit, figure 3)
V_DD = 400 V I_D = 3.7 A V_GS = 10 V
Min.
Typ.
11.5
9
18
6
8
Max.
25
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t_{r (Voff)}
t_f
t_c
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
V_DD = 400 V I_D = 3.7 A
R_G = 4.7 Ω V_GS = 10 V
(see test circuit, figure 5)
Min.
Typ.
7
6
13
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
V_SD (∗) Forward On Voltage
I_SD = 3.7 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
I_SD = 3.7 A di/dt = 100 A/µs
V_DD = 100 V T_j = 150 ^oC
(see test circuit, figure 5)
I _{R RM}
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
3.7
14.8
Unit
A
A
1.6
V
380
ns
2.3
µC
12
A
Safe Operating Area
Thermal Impedance
3/8