STD4NC50 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 500V - 1.3 ohm - 3.7 A TO-251 PowerMESH MOSFET

®
STD4NC50
N - CHANNEL 500V - 1.3 Ω - 3.7 A TO-251
PowerMESH™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
ST D4N C50
500 V < 1.5 Ω
3.7 A
s TYPICAL RDS(on) = 1.3 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
IPAK
TO-251
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V _DS
V _DGR
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
VGS
I_D
I_D
I_DM (•)
P_tot
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Va l u e
Un it
500
V
500
V
± 30
V
3.7
A
2.3
A
14.8
A
50
W
0.4
W /^o C
3
-65 to 150
150
( 1) ISD ≤3.7 A, di/dt ≤ 100 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
September 1999
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